First-principles calculations of surface adsorption and migration on GaAs surfaces
- 1 January 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 272 (2) , 345-363
- https://doi.org/10.1016/0040-6090(95)06958-5
Abstract
No abstract availableThis publication has 45 references indexed in Scilit:
- Coverage dependence of migration potential of cation adatoms on GaAs(001)-(2 × 4) surfaceSolid-State Electronics, 1994
- Ultrashallow Junction Formation Using Low-Temperature Selective Si1-xGex Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron DiffractionJapanese Journal of Applied Physics, 1993
- Energetics of As dimers on GaAs(001) As-rich surfacesPhysical Review Letters, 1993
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAsJapanese Journal of Applied Physics, 1988
- Free surfaces and multilayer interfaces in the GaAs/AlAs systemJournal of Crystal Growth, 1987
- Efficacious Form for Model PseudopotentialsPhysical Review Letters, 1982
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964