Low Schottky barrier of rare-earth silicide on n-Si
- 15 April 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (8) , 626-628
- https://doi.org/10.1063/1.92457
Abstract
Disilicide of rare‐earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n‐ and p‐type silicons at around 350 °C for Schottky‐barrier height measurement using I‐V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky‐barrier heights of about 0.4 eV on n‐Si and 0.7 eV on p‐Si were determined.Keywords
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