HgCdTe photodiodes formed by double-layer liquid phase epitaxial growth
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4) , 402-404
- https://doi.org/10.1063/1.91958
Abstract
High‐performance HgCdTe photodiodes have been formed by successive growth of p‐ and n‐type epitaxial layers on CdTe substrates via the liquid phase epitaxy technique. These diodes exhibit high resistance‐area (R0 A) products at high temperatures: R0 A products of 1 and 30 Ω cm2 have been observed at 283 and 200 K, respectively, for Hg0.68Cd0.32Te (λco=4.0 μm at 200 K). The saturation current density for the grown junction photodiode at 300 K is 0.12 A/cm2.Keywords
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