A defect etchant for single crystal GaSb
- 1 June 1982
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 1 (6) , 253-256
- https://doi.org/10.1007/bf00727849
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Micron-Sized Facets in Pulled GaSb CrystalsJapanese Journal of Applied Physics, 1980
- Study of Impurity Heterogeneities in InSb by Means of a Permanganate EtchantJournal of the Electrochemical Society, 1967
- Effect of the Polarity of the III-V Intermetallic Compounds on EtchingJournal of Applied Physics, 1960
- Characteristics of the {111} Surfaces of the III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1960