Analysis of The Threshold Voltage Adjustment and Floating Body Effect Suppression for 0.1 µm Fully Depleted SOI-MOSFET

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Abstract
The short channel effect for the fully depleted silicon-on-the-insulator metal-oxide-silicon field-effect-transistor (SOI-MOSFET) is analyzed based on a simple analytical model (capacitance network model). It is found that the origin of the short channel effect can be separated into two components. One is the potential modification due to the electric field between the gate electrode and S/D (source and the drain electrode), and the other is the degradation in the vertical component of the electric field of the acceptor. The capacitance network model considering the above two components explains the short channel effect down to the 0.1 µ m regime. The dopant concentration required to adjust threshold voltage is also given by this model. Moreover, based on the above analysis, a new structure to reduce the short channel effect with suppressing the floating body effect is proposed.

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