MOCVD growth of GaAs/AlGaAs wavelength resonant periodic gain vertical cavity surface-emitting laser

13 April 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (8) , 538-539
https://doi.org/10.1049/el:19890368

Abstract

The first all-semiconductor GaAs/AlGaAs vertical cavity laser incorporating wavelength resonant periodic gain layers grown by metalorganic chemical vapour deposition is reported. The optically pumped structure exhibits a threshold of 0.5 nJ at 852 nm for 720 nm pulsed excitation and energy conversion efficiencies up to ̃6%. The output linewidth is ≤0.4 nm FWHM with single longitudinal mode oscillation. An output of 0.43 nJ (~60 mW) is demonstrated at 300 K.

Keywords

This publication has 2 references indexed in Scilit:

Surface-emitting Lasers With Periodic Gain
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
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Published by Elsevier ,1978