The successful realisation of MQW DFB-SIBH lasers for 10Gbit/s systems applications is reported. The SIBH laser structure is completely based on an LPMOVPE growth process, including selective LPMOVPE of semi-insulating current blocking layers. Threshold currents as low as 7 mA and total chip capacitances of 2.6 pF are measured resulting in 6dBel (dBel = electrical dB) corner frequencies in excess of 11 GHz and rise/fall times of 36/44 ps, respectively. A significant reduction of the linewidth broadening compared to bulk lasers is observed which is attributed to a reduced α factor due to quantum wells. A chirp at – 20 dB of 0.47 nm under 10Gbit/s modulation is obtained.