Erratum: ‘‘Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy’’ [J. Appl. Phys. 78, 229 (1995)]
- 1 January 1996
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (1) , 562
- https://doi.org/10.1063/1.362719
Abstract
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