Nitrogen−implanted silicon. I. Damage annealing and lattice location
- 1 January 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (1) , 332-334
- https://doi.org/10.1063/1.321339
Abstract
The radiation damage and implanted atom location properties of nitrogen−implanted silicon have been studied. Helium−ion backscattering has been used to measure the damage for samples implanted at various doses and annealed to temperatures as high as 900 °C. The location of the implanted nitrogen in the silicon lattice has been investigated by using the 15N(p,α)12C nuclear reaction together with channeling techniques. The results indicate that ≳90% of the implanted atoms are located in nonsubstitutional positions in the silicon lattice, and that the implanted nitrogen has not outdiffused for anneals to 1185 °C. The results presented here will be used in Paper II to help explain many of the observed electrical porperties of nitrogen−implanted silicon.This publication has 5 references indexed in Scilit:
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