1 to 20 GHZ Monolithic Distributed Amplifier using GaAs MESFET'S or HEMT'S
- 1 September 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 249-254
- https://doi.org/10.1109/euma.1987.333633
Abstract
1 to 20 GHz monolithic FET amplifiers have been designed and fabricated. The design approach is based on a detailed analysis of the impedances and the cut-off frequency of the transmission lines to reduce the ripple and to increase the bandwidth up to the maximum capabilities of the FET's. The packaged MMIC results snow an overall gain of 11±1 dB for 2 stages from 1 to 19.5 GHz with an overall noise figure of 7.5 dB. Better performances can be achieved with 0,5 μm HEMT's : 8 dB gain from 1 to 20 GHz with a much lower noise figure (⩽ 5 dB)Keywords
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