Applications of SiC MESFETs and GaN HEMTs in power amplifier design
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1819-1822
- https://doi.org/10.1109/mwsym.2002.1012216
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999