Transition-Metal Impurities in Semiconductors and Heterojunction Band Lineups
- 11 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (2) , 199-202
- https://doi.org/10.1103/physrevlett.61.199
Abstract
The empirical rule connecting transition-metal levels in semiconductors with band-edge offsets at semiconductor heterojunctions is theoretically justified by a complete Green's-function calculation. It is shown from a detailed analysis that the transition-metal levels are effectively pinned to the average dangling-bond energy, the latter being at the same time interpreted as the charge neutrality level which controls the band-edge offset of a heterojunction.Keywords
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