High-voltage high-current GTO thyristors

1 January 1985

journal article
Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices

Vol. 132 (6) , 238-243
https://doi.org/10.1049/ip-i-1.1985.0053

Abstract

The basic design criteria for high-power gate turn-off (GTO) thyristors are discussed. Results of a Study of the influence of the p-base on gate avalanche voltage show that only a narrow range of voltages are possible. The importance of the cell array in determining debiasing effects on the gate electrode, and its effects on gate current density, are illustrated. Finally, the switching performance of 2500 V and 4500 V GTO thyristors with varying anode shorting efficiencies is examined.

Keywords

GATE AVALANCHE VOLTAGE
GATE CURRENT DENSITY
DESIGN CRITERIA
GTO THYRISTORS
GATE TURN-OFF
CELL ARRAY
DEBIASING EFFECTS
P-BASE
2500 V
VARYING ANODE SHORTING EFFICIENCIES
HV TYPE
HIGH CURRENT OPERATION
4500 V
SWITCHING PERFORMANCE

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