Gallium phosphide epitaxial layers with high mobility
- 1 August 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (8) , 363
- https://doi.org/10.1049/el:19670279
Abstract
Measurements on epitaxial layers of GaP, containing negligible amounts of GaAs, have yielded mobilities up to 200cm2/Vs at room temperature, and a peak value of 1480cm2/Vs. The residual impurity appears to be Si.Keywords
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