Material reactions Al/Pd2Si/Si junctions. II. Kinetic rates
- 1 November 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7445-7449
- https://doi.org/10.1063/1.330114
Abstract
The rates of material reactions in Al/Pd2Si/Si junctions have been measured as a function of time between 200 to 350 °C. Using an Auger sputter profiling technique, the kinetics and activation energies for Pd and Si diffusing into Al and the penetration of Al into Pd2Si were determined. The results can be correlated to the overall phase stability of the system and to the changes in the electrical characteristics of the Schottky junction. The mechanism of junction degradation and the role of Pd2Si are discussed. The present results reveal some basic limitations on the stability of this junction at elevated temperatures.This publication has 11 references indexed in Scilit:
- Material reactions in Al/Pd2Si/Si junctions. I. Phase stabilityJournal of Applied Physics, 1982
- Summary Abstract: Reaction kinetics in Al/Pd2Si/Si(100) junctionsJournal of Vacuum Science and Technology, 1981
- Effect of substrate temperature on the microstructure of thin-film silicideApplied Physics Letters, 1977
- Study of Al/Pd2Si contacts on SiJournal of Vacuum Science and Technology, 1977
- Auger study of preferred sputtering on binary alloy surfacesSurface Science, 1976
- A study of Pd2Si films on silicon using Auger electron spectroscopySolid-State Electronics, 1976
- Deconvolution method for composition profiling by Auger sputtering techniqueSurface Science, 1976
- Aging effects in Si-doped Al Schottky barrier diodesApplied Physics Letters, 1976
- Atom movements occurring at solid metal-semiconductor interfacesJournal of Vacuum Science and Technology, 1974
- An Investigation of the Structure of Pd[sub 2]Si Formed on SiJournal of the Electrochemical Society, 1974