Nearly complete level scheme ofSn116below 4.3 MeV

Abstract
The level scheme of Sn116 has been studied by combining the results of Sn115(n)116Sn and Sn116(n,n’γ)116Sn experiments. Both experiments were performed using isotopically enriched samples and Ge γ-ray detectors. Based on the thresholds of γ-ray excitation functions measured for the Sn116(n,n’γ) reaction and the precise γ-ray energies from the capture reaction, 100 levels were observed below 4.3 MeV excitation energy. Approximately half of these were not known previously. Forty-eight of these levels have unique or tentative spin-parity assignments, and for ten more the spin has been restricted to a single value. The spin-parity for most other levels below 4.3 MeV excitation has been restricted to a few values. These spin-parity assignments and limitations were derived mainly from (n,n’γ) angular distribution measurements, together with additional information obtained from the cross section magnitudes in both experiments.