Expansion of the electron-hole plasma in Si: A picosecond time-resolved Raman probe
- 15 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (8) , 4321-4324
- https://doi.org/10.1103/physrevb.37.4321
Abstract
The expansion velocity of the photoexcited electron-hole plasma in a Si crystal has been measured by time-resolved Raman scattering on a picosecond time scale with 1-μm spatial resolution. The observed transient density-time profile of the plasma can be fit by a modified diffusion equation based on a hydrodynamic model, which takes into account the driftlike motion of the plasma and proper boundary conditions. The deduced drift velocity of the plasma is shown to depend strongly on lattice temperature as well as plasma density.Keywords
This publication has 10 references indexed in Scilit:
- Picosecond time-resolved Raman studies of the expansion of the electron-hole plasma in SiPhysical Review B, 1987
- Optical time-of-flight investigation of the exciton transport in siliconJournal of Applied Physics, 1987
- Spatial expansion of electron-hole plasma in SiPhysical Review B, 1986
- Transport of degenerate electron-hole plasmas in Si and GeJournal of Luminescence, 1985
- Optical studies of fast plasma transport in SiJournal of Luminescence, 1985
- Phonon-Wind-Driven Electron-Hole Plasma in SiPhysical Review Letters, 1984
- Optical Properties of Fast-Diffusing Solid-State PlasmasPhysical Review Letters, 1983
- Carrier diffusion in semiconductors subject to large gradients of excited carrier densityPhysical Review B, 1981
- Intraband Raman scattering by free carriers in heavily dopedPhysical Review B, 1977
- Electronic Raman scattering and the metal-insulator transition in doped siliconPhysical Review B, 1976