Domain patterns in Gd2(MoO4)3 induced by bending

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Abstract
In a ferroelastic crystal, a change of state1 (switching) may be accomplished by applying suitable components of the stress tensor σij. Mechanical switching is normally studied under a quasihomogeneous stress. The stress field is produced either by suitable clamps acting directly on the sample2 or by cementing a thin sample on a thick substrate plate which is then subjected to a three- or four-point bending3,4. In the present contribution we wish to describe domain patterns arising in ferroelastic ferroelectric GMO samples subjected to bending deformation, i.e. in a strongly nonuniform stress field.