High field electron transport in n-InP/GaInAs two-dimensional electron gas
- 1 May 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 875-877
- https://doi.org/10.1063/1.95871
Abstract
High field electron transport in n‐InP/GaInAs two‐dimensional electron gas (2DEG) is studied at liquid helium temperature. In this experiment two kinds of samples are used: the first has a thick enough GaInAs layer to contain a three‐dimensional gas; the other has a thin GaInAs layer containing only a 2DEG on the GaInAs side of the heterojunction. In the sample with the thick GaInAs layer, Gunn oscillations are observed above 2.2 kV/cm. In the sample with the thin GaInAs layer, Gunn oscillations do not occur and an irreversible decrease of the sheet concentration of 2DEG is obtained after applying a high electric field. The highest measured drift velocity of this sample is 4.4×107 cm/s at 3.8 kV/cm.Keywords
This publication has 7 references indexed in Scilit:
- Selectively doped n + InP/n − GaInAs heterostructure prepared using chloride transport vapour-phase epitaxyElectronics Letters, 1984
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gasSolid State Communications, 1983
- Observation of intersubband scattering in a 2-dimensional electron systemSolid State Communications, 1982
- Negative differential resistance through real-space electron transferApplied Physics Letters, 1979
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973
- Suppression of Gunn oscillations by a two-dimensional effectProceedings of the IEEE, 1968