Randomness-InducedOrdering in a Graphene Quantum Hall Ferromagnet
- 10 April 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 98 (15) , 156801
- https://doi.org/10.1103/physrevlett.98.156801
Abstract
Valley-polarized quantum Hall states in graphene are described by a Heisenberg O(3) ferromagnet model, with the ordering type controlled by the strength and the sign of the valley anisotropy. A mechanism resulting from electron coupling to the strain-induced gauge field, giving a leading contribution to the anisotropy, is described in terms of an effective random magnetic field aligned with the ferromagnet axis. We argue that such a random field stabilizes the ferromagnet state, which is a coherent equal-weight mixture of the and valley states. The implications such as the Berezinskii-Kosterlitz-Thouless ordering transition and topological defects with half-integer charge are discussed.
Keywords
All Related Versions
This publication has 21 references indexed in Scilit:
- Electron interactions in graphene in a strong magnetic fieldPhysical Review B, 2006
- Graphene integer quantum Hall effect in the ferromagnetic and paramagnetic regimesPhysical Review B, 2006
- Quantum Hall Ferromagnetism in GraphenePhysical Review Letters, 2006
- Landau-Level Splitting in Graphene in High Magnetic FieldsPhysical Review Letters, 2006
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Experimental observation of the quantum Hall effect and Berry's phase in grapheneNature, 2005
- Two-dimensional atomic crystalsProceedings of the National Academy of Sciences, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Spontaneous interlayer coherence in double-layer quantum Hall systems: Charged vortices and Kosterlitz-Thouless phase transitionsPhysical Review B, 1995
- Quantum ferromagnetism and phase transitions in double-layer quantum Hall systemsPhysical Review Letters, 1994