Photoemission studies of the surface states and oxidation of group IV semiconductors

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Abstract
Photoemission utilizing synchrotron radiation has been used to study the electronic structure of surfaes and/or interfaces in the photon energy range up to 400 eV. The Si (111) surface exhibits well-established filled surface states which disappear after about 103 langmuirs of O2. At this exposure, only a broad shoulder has appeared on the high-binding-energy side of the Si 2p levels. This shoulder continues to grow in magnitude until much higher exposures, about 108 langmuirs of O2, when a 2.6-eV shifted peak begins to grow, indicating a higher state of oxidation of the Si. After exposure to activated oxygen, to stimulate the oxidation process, the chemical shift of the Si 2p level is found to be 3.7 eV, which is the same as observed in bulk SiO2. Similar results were obtained for the oxidation of the Ge(111) surface.

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