Optimum emitter aspect ratio for bipolar fiber-optic preamplifiers

1 September 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (9) , 437-439
https://doi.org/10.1109/edl.1987.26685

Abstract

Many monolithic fiber-optic preamplifiers use a bipolar transistor as the front-end device due to process restraints, despite the relatively poor noise performance of the bipolar transistor. This paper shows that there is an optimum emitter aspect ratio in a bipolar transistor operated at the optimum collector current for noise performance. An expression for this optimum emitter aspect ratio is developed and shown to agree very well with simulation results.

Keywords

PREAMPLIFIERS
SIGNAL TO NOISE RATIO
SEMICONDUCTOR DEVICE NOISE
COMPUTER SIMULATION
COMPUTATIONAL MODELING
SOLID MODELING
DOPING PROFILES
OPTICAL NOISE
COMPUTATIONAL GEOMETRY
BIPOLAR TRANSISTORS

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