Lucky-electron model of channel hot-electron injection in MOSFET'S

1 September 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (9) , 1116-1125
https://doi.org/10.1109/t-ed.1984.21674

Abstract

The lucky-electron concept is successfully applied to the modeling of channel hot-electron injection in n-channel MOSFET's, although the result can be interpreted in terms of electron temperature as well. This results in a relatively simple expression that can quantitatively predict channel hot-electron injection current in MOSFET's. The model is compared with measurements on a series of n-channel MOSFET's and good agreement is achieved. In the process, new values for many physical parameters such as hot-electron scattering mean-free-path, impact-ionization energy are determined. Of perhaps even greater practical significance is the quantitative correlation between the gate current and the substrate current that this model suggests.

Keywords

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