Photoluminescence excitation spectroscopy of hydrogenated amorphous silicon
- 1 January 1981
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 73 (1) , 278-282
- https://doi.org/10.1063/1.33046
Abstract
Photoluminescence excitation (PLE) spectra have been obtained at 77K for compacted samples of both glow discharge deposited and reactively sputtered a‐Si:H. In all cases the low energy PLE spectra parallel the slope of the higher energy band edge absorption curves obtained from thin films without change in slope down to ∠1.3 eV. The absence of a slope change or shoulder in the PLE spectra at energies ? 1.5 eV indicates that the low energy below gap absorption processes which give rise to the ∠1.3 eV shoulder observed in photoconductivity spectra of a‐Si:H d o n o t contribute to the excitation of the ∠1.3–1.4 eV luminescence band.Keywords
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