A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 432-434
- https://doi.org/10.1016/0022-3093(89)90608-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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