Growth Characteristics of CVD Beta‐Silicon Carbide

Publisher Website
Google Scholar
Abstract
The films of were prepared from the methyltrichlorosilane (MTS) by low pressure chemical vapor deposition onto the graphite substrates. The results revealed that the growth rate of increased with the MTS flux; besides, the growth rate increased to a maximum and then decreased with increasing deposition temperature. The preferred orientation of the films was examined by x‐ray diffraction, and was found to exhibit a (220) texture in the films of high growth rate and/or long deposition time. The structural morphology was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Observed features indicated the twin plane reentrant edge (TPRE) mechanism as responsible for the growth. The growth features of particulate crystals (e.g., dendrites, whiskers, needles) were identified, and also could be interpreted in terms of the TPRE mechanism.

This publication has 0 references indexed in Scilit: