High-speed InP/GaInAs metal-semiconductor-metal photodetectors grown by chemical beam epitaxy
- 11 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (2) , 228-230
- https://doi.org/10.1063/1.112637
Abstract
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detectors were formed by the evaporation of Au and patterned using a lift-off technique. The MSM photodiodes exhibit a dark current lower than 200 nA at 15-V bias, an efficient photoresponse up to 1.6 μm, and a fast deconvoluted full width at half maximum response of about 25 ps at 12-V bias.Keywords
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