Surface processes during growth of GaAs by MOCVD
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 56-61
- https://doi.org/10.1016/0022-0248(91)90434-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A theoretical study of adsorption equilibria in silicon CVDJournal of Crystal Growth, 1990
- Geometrical structures, force constants, and vibrational spectra of SiH, SiH2, SiH3, and SiH4Chemical Physics, 1986
- Equilibrium gas phase species for MOCVD of AlxGa1−xAsJournal of Crystal Growth, 1986