Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Preprint

5 August 1999

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.quant-ph/9908021

Abstract

We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.

Keywords

MEASUREMENT PROCEDURE
COUPLED QUANTUM DOTS
GATES OF COUPLED
QUANTUM GATES
QUANTUM DOTS
CHARGING
MOSFET

All Related Versions

Version 1, 1999-08-05, ArXiv
Published version: Physica B: Condensed Matter, 272 (1), 45.