Comparison of High-Purity-Ozone Oxidation on Si(111) and Si(100)
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Low Temperature Oxidation Processing with High Purity OzoneMRS Proceedings, 1996
- X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity OzoneJapanese Journal of Applied Physics, 1995
- Evaluation of new ozone generator designed for oxide film formation by molecular beam epitaxy methodJournal of Vacuum Science & Technology A, 1991
- Ozone jet generator as an oxidizing reagent source for preparation of superconducting oxide thin filmReview of Scientific Instruments, 1991
- Oxidation kinetics of Si(111)7×7in the submonolayer regimePhysical Review B, 1989
- Reactive atom–surface scattering: The adsorption and reaction of atomic oxygen on the Si(100) surfaceJournal of Vacuum Science & Technology A, 1989
- Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100): A molecular beam, XPS, and ISS studySurface Science, 1987