New approach to the strain relaxation mechanism in lattice-mismatched epitaxy
- 1 June 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 201 (1) , 59-67
- https://doi.org/10.1016/0040-6090(91)90154-p
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Growth of CdTe on GaAs by hot-wall epitaxy and its stress relaxationJournal of Applied Physics, 1989
- Growth and characterization of high-quality CdTe epilayers on GaAs substrates by hot-wall epitaxyJournal of Crystal Growth, 1988
- CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterizationSurface Science, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- The low-temperature thermal expansion and Gruneisen parameters of some tetrahedrally bonded solidsJournal of Physics C: Solid State Physics, 1975
- Structure of epitaxial crystal interfacesSurface Science, 1972
- Thermal Expansion Measurements on Four Optical Materials from Room Temperature to 10 KApplied Optics, 1972
- X-ray determination of the lattice parameters and thermal expansion of cadmium telluride in the temperature range 20–420°CSolid State Communications, 1969
- Precision Thermal Expansion Measurements of Semi-insulating GaAsJournal of Applied Physics, 1968
- Thermal Expansions from 2 to 40°K of Ge, Si, and Four III-V CompoundsPhysical Review B, 1967