Continuously clocked 1 GHz GaAs CCD

1 March 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (3) , 70-72
https://doi.org/10.1109/EDL.1981.25344

Abstract

The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment.

Keywords

CLOCKS
GALLIUM ARSENIDE
CHARGE COUPLED DEVICES
SILICON
SURFACE ACOUSTIC WAVE DEVICES
CHARGE TRANSFER
CURRENT MEASUREMENT
CHARGE MEASUREMENT
FREQUENCY MEASUREMENT
CHARGE-COUPLED IMAGE SENSORS

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