Growth of InP and InGaAs by MO-Chloride VPE
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9A) , L770-772
- https://doi.org/10.1143/jjap.25.l770
Abstract
A novel chloride vapor phase epitaxial (VPE) growth of InP and InGaAs is performed using metal organic compounds instead of III group metal sources. The effect of an introduced partial pressure ratio between TMI and PCl3 on the InPgrowth features was investigated and analyzed thermodynamically. Typical values of carrier concentration and mobility for both of undoped InP and InGaAs at 77 K range in 4-15×1015 cm-3 and 10000–15000 cm2/Vs, respectivety.Keywords
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