Thermal stability of Be-, Mg-, and Zn-implanted layers in GaAs for high-temperature device-processing technology
- 15 September 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (6) , 2759-2761
- https://doi.org/10.1063/1.344200
Abstract
Results on the thermal stability of active acceptor layers in GaAs formed by Be, Mg, and Zn implantation are reported. Following rapid thermal annealing at 635 °C/35 s and 800 °C/15 s, the sheet carrier concentration is observed to remain constant after subsequent heat treatment below 600 °C for times up to 6 h. At and above this temperature, however, various changes are observed for different implants. These changes in the sheet electrical properties are observed to be reversible in the case of the Zn-implanted samples, where almost complete carrier recovery is observed after the samples were rapid thermal annealed at 800 °C/15 s after a long thermal anneal at 600 °C for 6 h.This publication has 3 references indexed in Scilit:
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- Transient annealing of ion implanted GaAsMicroelectronics Journal, 1982
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981