Stability of reducedV2O5(001)surfaces

Abstract
The defect-free V2O5(001) surface and ordered structures involving oxygen vacancies have been studied for a wide range of defect concentrations, Θ (16Θ1 monolayer, ML), combining density functional theory and statistical thermodynamics. At Θ=14ML the oxygen vacancy formation energy for the singly coordinated surface oxygen atoms (vanadyl oxygen, O1) is by 1.7eVatom and 2.0eVatom lower than the corresponding values for two- and threefold coordinated surface oxygen atoms, respectively. Between 13 and 12ML the alignment of vanadyl oxygen vacancies (Ovac1) along the [010] direction is by 70meVatom (Θ=13ML) and 120meVatom (Θ=12ML) more favorable than along the [100] direction, with the concentration-induced change of the vacancy formation energy for structures with vacancies aligned along the [100] direction being smaller than 20meVatom. The lowest vacancy formation energy of 1.87eVatom corresponds to the (1×1)Ovac1(Θ=12ML) phase with defects forming a trenchlike structure with rows along the [010] direction. Above 12ML the vacancy formation energy increases up to 2.07eVatom (Θ=1ML). The ease of formation of nonrandom vacancy structures with a favored alignment along the [010] direction is discussed in terms of special vacancy-induced lattice distortions. It is also argued that the trenches along the [010] direction provide preferred paths for continuous reduction of the surface starting from isolated defect sites. However, this missing-row structure would be stable only at very low oxygen partial pressures close to conditions for which V2O5 decomposes into VO2 and O2.