On the measurement of densities of states in amorphous semiconductors
- 1 May 1984
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 49 (5) , L57-L59
- https://doi.org/10.1080/13642818408227652
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Generalizations of multiple trappingPhilosophical Magazine Part B, 1983
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICONLe Journal de Physique Colloques, 1981
- Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -Physical Review Letters, 1981
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981