AlGaAs Schottky reflection modulator and detector for Gbit/s optical transmission systems

22 June 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (13) , 847-849
https://doi.org/10.1049/el:19890571

Abstract

An electro-optic reflection modulator operated at incidence normal to the surface is presented attaining a switching contrast of 87:1 up to Gbit/s bit rates. The underlying mechanism is electroabsorption in the multilayered AlGaAs device. Operating the device for photodetection, we achieve a responsivity of about 1 A/W.

Keywords

SCHOTTKY REFLECTION DETECTOR
ELECTROABSORPTION
ALGAAS SCHOTTKY REFLECTION MODULATOR
SEMICONDUCTORS
1 GBIT/S
ON OFF RATIO
GBIT/S BIT RATES
MULTILAYERED ALGAAS DEVICE
SWITCHING CONTRAST
GBIT/S OPTICAL TRANSMISSION SYSTEMS
ELECTRO-OPTIC REFLECTION MODULATOR
RESPONSIVITY

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