Pressure dependence of the electronic properties of cubic III-V In compounds
- 15 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (3) , 1598-1602
- https://doi.org/10.1103/physrevb.41.1598
Abstract
Electronic and ground-state properties of the binary In compounds in the zinc-blende structure are reported. They are evaluated in the local-density approximation using norm-conserving nonlocal pseudopotentials. Besides the lattice constant, the bulk modulus, and its first and second pressure derivative, the first- and second-order pressure coefficients of the main band gaps (at Γ, X, and L) are given. The hydrostatic deformation potentials and the crossover pressure from direct to indirect band gap are presented and compared with recent experimental values.Keywords
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