Ballistic spin-filter transistor
- 6 April 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (16) , 161307
- https://doi.org/10.1103/physrevb.63.161307
Abstract
Spin-dependent ballistic transport in a mesoscopic two-dimensional electron system with two metallic ferromagnetic electrodes is studied using the Landauer-Büttiker formalism. Our calculations predict a pronounced spin-valve effect in the ballistic regime for, e.g., Fe on InAs. The origin is spin filtering at the interfaces. In this spintronic device, the magnetoconductance ratio can be controlled via a gate voltage.Keywords
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