Very short gate-length GaAs MESFET's
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (9) , 471-472
- https://doi.org/10.1109/edl.1985.26196
Abstract
GaAs MESFET's with gate lengths ranging from 0.36 µm down to 0.055 µm, the smallest so far reported, have been fabricated using electron-beam lithography. DC output characteristics were obtained from all of the devices tested and transconductances up to 300 mS/mm were measured. However it was observed that there is a maximum drain-source voltage that can be pinched off in these short gate devices. This voltage varies exponentially from 1 V in the 0.055-µm gate devices to 6 V in the 0.36-µm device. It is speculated that this effect is due to current injection into the buffer layer.Keywords
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