The use of channeling-effect techniques to locate interstitial foreign atoms in silicon

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Abstract
When the channeling-effect technique is used to determine the lattice location of an impurity which is not completely substitutional, quantitative interpretation of the results requires knowledge of the interaction yield between a channeled beam and an interstitial atom. We have investigated this problem for Yb implanted into silicon. Along the direction, a peak of almost a factor of two is observed in backscattering yield from the Yb atoms, using a 1-MeV He beam. The height and angular width of the peak is satisfactorily interpreted in terms of flux-peaking of the channeled beam in the central region of the channels. The existence of such a large flux-peaking effect seriously complicates quantitative determination of the location of non-substitutional impurities. However, it is still possible to establish rather accurately the lattice position of the impurity, provided the measured minimum yields and angular widths of the and dips are taken into account.