Doped Silicon Oxide Deposition by Atmospheric Pressure and Low Temperature Chemical Vapor Deposition Using Tetraethoxysilane and Ozone
- 1 October 1991
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 138 (10) , 3019-3024
- https://doi.org/10.1149/1.2085358
Abstract
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