DNA detection on transistor arrays following mutation-specific enzymatic amplification

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Abstract
An integrated array of silicon field-effect transistor structures is used for electronic detection of label-free DNA. Measurements of the dc current–voltage characteristics of the transistors gives us access to reproducible detection of single- and double-stranded DNA, locally adsorbed on the surface of the device. We combine this approach with allele-specific polymerase chain reaction, to test for the 35delG mutation, a frequent mutation related to prelingual nonsyndromic deafness.