High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A) , L654
- https://doi.org/10.1143/jjap.23.l654
Abstract
Novel two dimensional electron gas FETs, which have a short period AlAs/n-GaAs superlattice for an electron supplying layer, were successfully fabricated for the first time using a molecular beam epitaxy and a conventional recessed gate process. The threshold voltage changes with changes in temperature (77–300 K) and resulting from light illumination are effectively suppressed (ΔV T≈0.1 V). This stability is ascribed to low deep electron trap concentration in the superlattice. The high intrinsic transconductances of 325 mS/mm (77 K) and 146 mS/mm (300 K) are obtained for 3 µm gate FETs.Keywords
This publication has 5 references indexed in Scilit:
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–Japanese Journal of Applied Physics, 1983
- Instabilities in modulation doped field-effect transistors (MODFETs) at 77 KElectronics Letters, 1983
- Temperature dependence of the I–V characteristics of modulation-doped FETsJournal of Vacuum Science & Technology B, 1983
- Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxyThin Solid Films, 1983
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979