Ultrasonic loss and gain mechanisms in semiconductors
- 1 January 1965
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 53 (10) , 1438-1451
- https://doi.org/10.1109/proc.1965.4258
Abstract
Several kinds of interactions of ultrasound in semiconductors are reviewed. The subjects discussed are the effects of interaction with 1) thermal phonons, which produce temperature dependent attenuation; 2) free carriers, which may give attenuation or amplification; 3) electrons bound to shallow donors, giving rise to attenuation at low temperatures; and 4) other ultrasonic waves, which may give attenuation or amplification. An introduction to relaxation effects is included.Keywords
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