Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R) , 2590-2595
- https://doi.org/10.1143/jjap.29.2590
Abstract
This paper describes the electron beam direct writing technology for 64-Mb DRAM LSIs including a resist process for 0.3-µm resolution, the prevention of the charging problem by a conducting polymer, and proximity effect correction by both the pattern classification method and the subsidiary exposure method. A large amount of pattern data is processed after dividing the whole chip data into peripheral circuits and 256-kb memory mats. An experimental 64-Mb DRAM LSI is fabricated by these technologies.Keywords
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