Modeling and Radiation Effects Study of an LSI/MOS Logic System
- 1 January 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 18 (6) , 263-272
- https://doi.org/10.1109/tns.1971.4326442
Abstract
This paper presents the results of a comprehensive modeling and radiation effects study of a p-channel enhancement mode LSI/MOS test chip (TC) specifically designed to allow measurement of discrete device type parameters and responses for circuits constructed from similar devices on a common chip. Particular emphasis was given to the development of accurate models of the individual devices and to the demonstration of the use of these models in predicting the radiation responses of the circuits on the chip. Ionization dose and neutron effects were determined for each of the parameters used in the model which contained the basic Sah equations modified to include channel length modulation effects, the body effect, and the electric-field-dependence of channel mobility. Average values of these parameters were then used in predictions of pre- and post-radiation responses for circuits.Keywords
This publication has 3 references indexed in Scilit:
- Neutron Produced Trapping Centers in Junction Field Effect TransistorsIEEE Transactions on Nuclear Science, 1971
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964