In 0.53 Ga 0.47 As contact layer for 1.3 μm light-emitting diodes
- 17 September 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (19) , 703-705
- https://doi.org/10.1049/el:19810493
Abstract
Measurements of the specific contact resistance on epitaxially grown layers of p-In1−xGaxAsyP1−y as a function of composition demonstrate the resistance minimum of 7×10−6 Ωcm2 for In0.53Ga0.47As. Growth procedures for the preparation of InGaAsP/InP double-heterostructure LED wafers incorporating such a ternary InGaAs contact layer are described. This contacting technique allows fabrication of high-performance devices with reproducibly low series resistance.Keywords
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