Electrooptical effects in silicon
Open Access
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (1) , 123-129
- https://doi.org/10.1109/jqe.1987.1073206
Abstract
A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the1.0-2.0 \mum optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find\Delta n = 1.3 \times 10^{5}at\lambda = 1.07 \mum whenE = 10^{5}V/cm, while the Kerr effect gives\Delta n = 10^{-6}at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of\pm1.5 \times 10^{-3}at\lambda = 1.3 \mum.Keywords
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