Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition
- 9 January 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (2) , 189-191
- https://doi.org/10.1063/1.113130
Abstract
The room‐temperature minority carrier lifetimes have been measured on 6H SiC epitaxial layers with residual n‐type doping ranging from below 1014 cm−3 to above 1017 cm−3. Lifetimes as high as 0.45 μs have been achieved for thick low‐doped material. The samples were grown by chemical vapor deposition using silane and propane or silane and methane in a hydrogen ambient. The minority carrier lifetimes were measured by monitoring the decay of the near‐band gap room‐temperature luminescence of the samples after excitation of a short laser pulse.Keywords
This publication has 0 references indexed in Scilit: